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PD413PI
PD413PI
s Features
1. Built-in visible light cut-off filter (Sensitivity wavelength range : 750 to 1070 nm) 2. Half intensity angle : : 45
High Speed Type Photodiode
s Outline Dimensions
4.0
Detector center
0.2
(Unit : mm)
2.0 0.2 R1.75 0.1 1.5 0.5
2.4
Rest of gate 0.4MAX.
2.5
s Applications
1. Portable information terminal equipment 2. Personal computers 3. Printers
0.8
2-0.77 17.15 2-0.4
+ 0.2 - 0.1
2.15
Mark (blue)
5.0 0.2
8
8
2-0.45
+0.2 - 0.1
(2.54 ) 8 1 8
0.5 MIN.
2
1 Anode 2 Cathode
3.75 0.2
1
2
s Absolute Maximum Ratings
Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol VR P T opr T stg T sol Rating 32 150 - 25 to + 85 - 40 to + 100 260
(Ta=25C) Unit V mW C C C
*1 For 5 seconds at the position of 2.15 mm from bottom face of resin package
s Electro-optical Characteristics
Parameter Shortcircuit current Dark current Forward voltage Terminal capacitance Peak sensitivity wavelength Half intensity angle Response time Symbol ISC Id VF Ct p tr , t f Conditions EV *2 = 100 lx VR= 10V, E V = 0 IF= 1mA VR= 3V, f= 1MHz RL= 1k , VR= 10V MIN. 4.5 TYP. 5.4 20 960 45 200 MAX. 8.1 10 1 35 -
(Ta=25 C)
Unit A nA V pF nm ns
*2 E v : Illuminance by CIE standard light source A (tungsten lamp)
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
Black visible light cut epoxy resin
+1.5 - 1.0
PD413PI
Fig. 1 Power Dissipation vs. Ambient Temperature
200
Fig. 2 Spectral Sensitivity
100 90 80
Power dissipation P (mW)
150
Relative sensitivity (%)
70 60 50 40 30 20 10
100
50
0 - 25
0
25
50
75 85
100
0 600
700
800
900
1 000
1 100
1 200
Ambient temperature Ta (C)
Wavelength (nm)
Fig. 3 Shortcircuit Current vs. Illuminance
1 000 Ta=25C
Fig. 4 Dark Current vs. Ambient Temperature
10
-6
VR =10V 10
-7
Shortcircuit current I SC ( A)
100
10
Dark current I d (A)
1 10 100 1 000 10 000
10
-8
10
-9
1
10
-10
0.1
10 10
- 11
0.01
-12
- 25
0
25
50
75
100
Illuminance E v (lx)
Ambient temperature T a (C)
Fig. 5 Dark Current vs. Reverse Voltage
10
-7
Fig. 6 Terminal Capacitance vs. Reverse Voltage
60 f = 1MHz Ta = 25C 50
5 2
Ta = 25C
10 - 8
5 2
Terminal capacitance C t ( pF )
5
Dark current I d (A)
40
10 -9
5 2
30
20
10 -10
5 2
10 0 0.05 0.1 0.2
10 - 11
10- 2
2
5
10- 1
2
5
100
2
5
10
2
5
0.5
1
2
5
10
20
50
Reverse voltage VR (V)
Reverse voltage VR ( V)
PD413PI
Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538)
160 Test circuit 140 120 GL537/ GL538 PD413Pl A - 40 - 30
Fig. 8 Radiation Diagram
- 20 -10 0 100 80 +10
(Ta = 25C )
+ 20
+ 30
Relative sensitivity (%)
Relative output (%)
100 80
60
+ 40
- 50 60 40 20 0 - 25 - 60
40
+ 50 + 60
(
Fix PD and GL at position so that distance between them may be ISC =100 A at I F =20mA and Ta=25C 0 25 50 75
)
100
20 - 70 - 80 - 90 0 + 70 + 80 + 90
Ambient temperature Ta (C)
Angular displacement
Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538)
100 GL538
Fig. 10 Response Time vs. Load Resistance
102
5 VR= 10V
Ta= 25C
2
Response time t r,t f ( s)
IF = 20mA Ta= 25C
101
5 2
Relative output (%)
10
GL537
100
5 2
1
10-
1
5 2
0.1 10 - 4
10-3
10- 2
10-1
10-
2
10 2
5 102 2
5 103 2
5 104 2
5 105
Distance between emitter and detector d (mm)
Load resistance R L ( )
Test Circuit for Response Time
Semiconductor laser
IOUT = 0.1mA PD413PI Output + RL
Input
10V 90% Output tr tr 10%
Pulse generator
q Please refer to the chapter "Precautions for Use". (Page 78 to 93)

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